Image sensor device with IR filter and related methods
US9059058B2 · kind B2 · utility
1Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor device may include a bottom interconnect layer, an image sensing IC above the bottom interconnect layer and coupled thereto, and an adhesive material on the image sensing IC. The image sensor device may include an IR filter layer above the lens layer, and an encapsulation material on the bottom interconnect layer and surrounding the image sensing IC, the lens layer, and the IR filter layer. The image sensor device may include a top contact layer above the encapsulation material and including a dielectric layer, and a contact thereon, the dielectric layer being flush with adjacent portions of the IR filter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.