Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US9059118B2 · kind B2 · utility
6Cited by
40References
5Claims
0Family size
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Key dates
| Filing date | Jun 24, 2009 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Jun 24, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically increases the number of point defects and resulting states in the crystal, and then cooling the heated crystal at a sufficiently rapid rate to maintain an increased concentration of point defects in the cooled crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.