Copper interconnect with CVD liner and metallic cap

US9059176B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• STMICROELECTRONICS, INC. · US
• RENESAS ELECTRONICS CORPORATION · JP
• GlobalFoundries Inc. · KY

Inventors

• Frieder H. Baumann · Beachwood, US
• Chao-Kun Hu · Somers, US
• Andrew H. Simon · Fishkill, US
• Tibor Bolom · Fishkill, US
• Koichi Motoyama · Clifton Park, US
• Chengyu Niu · Hopewell Junction, US

Key dates

• Filing date: Apr 20, 2012
• Grant date: Jun 16, 2015
• Expiry date: Nov 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.