High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control

US9059194B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Colin J. Brodsky · Salt Point, US
• Anne C. Friedman · Fishkill, US
• Herbert L. Ho · New Windsor, US
• Byeong Y. Kim · Lagrangeville, US
• Dan M. Mocuta · Herent, BE
• Garrett W. Oakley · Gainesville, US
• Chienfan Yu · Highland Mills, US

Key dates

• Filing date: Jan 10, 2013
• Grant date: Jun 16, 2015
• Expiry date: Jan 10, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. Control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.