Magnetic random access memory cells with isolating liners
US9059400B2 · kind B2 · utility
2Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Mar 10, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.