Patent · US Active

Aqueous cleaner for the removal of post-etch residues

US9063431B2 · kind B2 · utility

17Cited by
23References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 15, 2011
Grant dateJun 23, 2015
Priority date
Expiry dateAug 12, 2031

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC11D2111/20
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.