Patent · US Active

Copper cleaning and protection formulations

US9074170B2 · kind B2 · utility

20Cited by
51References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 20, 2009
Grant dateJul 7, 2015
Priority date
Expiry dateFeb 3, 2030

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC11D2111/22
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.