Transistor and semiconductor structure
US9076784B2 · kind B2 · utility
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23References
5Claims
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Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Aug 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. A semiconductor process forming said semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.