Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

US9076838B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Alexander Philippou · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Christian Jaeger · Munich, DE
• Roman Baburske · Otterfing, DE
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Sep 13, 2013
• Grant date: Jul 7, 2015
• Expiry date: Sep 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An IGBT includes a mesa section that extends between two cell trench structures from a first surface of a semiconductor portion to a layer section of the semiconductor portion. A source region, which is electrically connected to an emitter electrode, is formed in the mesa section. A doped region, which is separated from the source region by a body region of a complementary conductivity type, includes a first portion with a first mean net impurity concentration and a second portion with a second mean net impurity concentration exceeding at least ten times the first mean net impurity concentration. In the mesa section the first portion extends from the body region to the layer section. The second portions of the doped region virtually narrow the mesa sections in a normal on-state of the IGBT.