Atomic layer deposition methods for metal gate electrodes
US9082702B2 · kind B2 · utility
15Cited by
7References
8Claims
0Family size
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Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Feb 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.