Patent · US Active

Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer

US9082780B2 · kind B2 · utility

8Cited by
37References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 23, 2012
Grant dateJul 14, 2015
Priority date
Expiry dateJul 14, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a semiconductor die. An encapsulant is deposited around the semiconductor die. An interconnect structure having a conductive bump is formed over the encapsulant and semiconductor die. A mechanical support layer is formed over the interconnect structure and around the conductive bump. The mechanical support layer is formed over a corner of the semiconductor die and over a corner of the interconnect structure. An opening is formed through the encapsulant that extends to the interconnect structure. A conductive material is deposited within the opening to form a conductive through encapsulant via (TEV) that is electrically connected to the interconnect structure. A semiconductor device is mounted to the TEV and over the semiconductor die to form a package-on-package (PoP) device. A warpage balance layer is formed over the encapsulant opposite the interconnect structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.