Bulk finFET with punchthrough stopper region and method of fabrication
US9082853B2 · kind B2 · utility
17Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved bulk FinFET with a punchthrough stopper region, and method of fabrication are disclosed. The dopants used to form the punchthrough stopper are supplied from a shallow trench isolation liner. An anneal diffuses the dopants from the shallow trench isolation liner into the bulk substrate and lower portion of the fins, to form the punchthrough stopper region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.