Method and structure for finFET with finely controlled device width

US9082873B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Tenko Yamashita · Schenectady, US
• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Shom Ponoth · Irvine, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: Sep 20, 2012
• Grant date: Jul 14, 2015
• Expiry date: Jun 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A structure and method for fabricating finFETs of varying effective device widths is disclosed. Groups of fins are shortened by a predetermined amount to achieve an effective device width that is equivalent to a real (non-integer) number of full-sized fins. The bottom of each group of fins is coplanar, while the tops of the fins from the different groups of fins may be at different levels.