Etching method
US9087798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. In the etching method, a gate material deposited between multiple fins is etched by using surface wave plasma. A pressure in the etching method is 50 mTorr (6.67 Pa) or more, a frequency of a power to be applied to a mounting table configured to mount thereon the target object is in a range of 10 Hz or more to 200 Hz or less, and the power is pulse-modulated such that a duty ratio as a ratio of an ON-time to a pulse cycle is 50% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.