Semiconductor device with thick bottom metal and preparation method thereof
US9087828B2 · kind B2 · utility
2Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.