Method for generating a topography of an FDSOI integrated circuit
US9092590B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 13, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/394
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An IC including first and second FDSOI UTBOX cells arranged in a row, the first having an nMOS transistor arranged plumb with and above a ground plane and an N-type well, and a pMOS transistor arranged plumb with and above a ground plane and a P-type well, the N-type well and the P-type well being arranged on either side of a row axis, wherein the second includes a diode protecting against antenna effects or a well tap cell, the second cell comprising a P-type well arranged in the alignment of the P-type well of the pMOS transistor and comprising an N-type well arranged in the alignment of the N-type well of the nMOS transistor, the second cell comprising a metal connection coupled to its P-type well and coupled to a higher-level metal connection element arranged plumb with the N-type well, the metal connection extending on either side of the axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.