Method of patterning a silicon nitride dielectric film
US9093389B2 · kind B2 · utility
103Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2014 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jan 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.