Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same

US9093476B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jinping Liu · Ballston Lake, US
• Bharat Krishnan · Mechanicville, US
• Bongki Lee · Malta, US
• Vidmantas Sargunas · Clifton Park, US
• Weihua Tong · Mechanicville, US
• Seung Kim · Bodden Town, KY

Key dates

• Filing date: Jul 30, 2013
• Grant date: Jul 28, 2015
• Expiry date: Jul 30, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0193

Abstract

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a channel region of a fin structure with a first side, a second side, an exposed first end surface and an exposed second end surface. A gate is formed overlying the first side and second side of the channel region. The method includes implanting ions into the channel region through the exposed first end surface and the exposed second end surface. Further, the method includes forming source/drain regions of the fin structure adjacent the exposed first end surface and the exposed second end surface of the channel region.