Bongki Lee
13Patents
4h-index
28Co-inventors
52Inventor score
Filing activity: Jul 30, 2013 → Oct 3, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9362180B2 | Integrated circuit having multiple threshold voltages | Electricity | 405 | Active |
| US9455201B2 | Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits | Electricity | 17 | Active |
| US11132991B2 | Method and apparatus for determining voice enable device | Physics | 7 | Active |
| US10818309B2 | Apparatus for noise canceling and method for the same | Physics | 4 | Active |
| US9196475B2 | Methods for fabricating integrated circuits including fluorine incorporation | Electricity | 4 | Active |
| US9287180B2 | Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same | Electricity | 3 | Active |
| US11211062B2 | Intelligent voice recognizing method with improved noise cancellation, voice recognizing apparatus, intelligent computing device and server | Physics | 2 | Active |
| US11222636B2 | Intelligent voice recognizing method, apparatus, and intelligent computing device | Physics | 2 | Active |
| US9059218B2 | Reducing gate expansion after source and drain implant in gate last process | Electricity | 1 | Active |
| US9165767B2 | Semiconductor structure with increased space and volume between shaped epitaxial structures | Electricity | 1 | Active |
| US8912085B1 | Method and apparatus for adjusting threshold voltage in a replacement metal gate integration | Electricity | 0 | Active |
| US9472465B2 | Methods of fabricating integrated circuits | Electricity | 0 | Active |
| US9093476B2 | Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.