Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
US9093556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.