Micropipe-free silicon carbide and related method of manufacture
US9099377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2007 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.