Doped semiconductor films and processing

US9099423B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Keith Doran Weeks · Chandler, US
• John Tolle · Gilbert, US
• Matthew G. Goodman · Chandler, US
• Sandeep Mehta · Beverly, US

Key dates

• Filing date: Dec 30, 2013
• Grant date: Aug 4, 2015
• Expiry date: Dec 30, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32135
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration.