Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

US9102693B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• Ziyun Wang · Bethel, US
• Chongying Xu · New Milford, US
• Bryan C. Hendrix · Danbury, US
• Jeffrey F. Roeder · Brookfield, US
• Tianniu Chen · Westford, US
• Thomas H. Baum · New Fairfield, US

Key dates

• Filing date: Jul 17, 2014
• Grant date: Aug 11, 2015
• Expiry date: Jul 17, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.