Method and system for growing a thin film using a gas cluster ion beam
US9103031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2008 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Aug 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.