Devices and methods of forming fins at tight fin pitches

US9105478B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andy Wei · Queensbury, US
• Mariappan Hariharaputhiran · Ballston Lake, US
• Dae Geun Yang · Watervliet, US
• Dae-Han Choi · Watervliet, US
• Xiang Hu · Shanghai, CN
• Richard J. Carter · Los Altos, US
• Akshey Sehgal · Malta, US

Key dates

• Filing date: Oct 28, 2013
• Grant date: Aug 11, 2015
• Expiry date: Oct 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0338
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Devices and methods for forming semiconductor devices with fins at tight fin pitches are provided. One method includes, for instance: obtaining an intermediate semiconductor device; growing an epi layer over the substrate; forming a doped layer below the epi layer; depositing a first oxide layer on the epi layer; applying a dielectric material on the first oxide layer; and depositing a lithography stack on the dielectric material. One intermediate semiconductor device includes, for instance: a substrate with at least one n-well region and at least one p-well region; a doped layer over the substrate; an epi layer over the doped layer; a first oxide layer over the epi layer; a dielectric layer over the first oxide layer; and a lithography stack over the dielectric layer.