Metal heterocyclic compounds for deposition of thin films
US9109281B2 · kind B2 · utility
3Cited by
24References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.