Patent · US Active

MRAM smart bit write algorithm with error correction parity bits

US9110829B2 · kind B2 · utility

6Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 14, 2013
Grant dateAug 18, 2015
Priority date
Expiry dateNov 6, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2013/0076
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Some aspects of the present disclosure relate a method. The method attempts to write an expected multi-bit word to a memory location in memory. After writing of the multi-bit word has been attempted, an actual multi-bit word is read from the memory location. The actual multi-bit word is then compared with the expected multi-bit word to identify a number of erroneous bits and a number of correct bits stored in the memory location. The number of erroneous bits is re-written to the memory location without attempting to re-write the correct bits to the memory location.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.