Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9112057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jan 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes providing a substrate having a semiconducting surface and forming a first epitaxial layer on the semiconducting surface. The first epitaxial layer includes a first semiconducting material doped in-situ with at least one dopant of a first conductivity type. The method also includes adding at least one dopant of a second conductivity type into one portion of the substrate to define at least one counter-doped region with an overall doping of the second conductivity type and at least one other region with an overall doping of the first conductivity type in the other portions of substrate. The method further includes forming a second epitaxial layer on the first epitaxial layer, the second epitaxial layer being a second semiconducting material that is substantially undoped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.