Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure

US9117694B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Hans Weber · Villach, AT
• Stefan Gamerith · Villach, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: May 1, 2013
• Grant date: Aug 25, 2015
• Expiry date: May 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A super junction semiconductor device includes strip structures between mesa regions that protrude from a base section in a cell area. Each strip structure includes a compensation structure with a first and a second section inversely provided on opposing sides of a fill structure. Each section includes a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The strip structures extend into an edge area surrounding the cell area. In the edge area the strip structures include end sections. The end sections may be modified to enhance break down voltage characteristics, avalanche ruggedness and commutation behavior.