Air-spacer MOS transistor
US9117805B2 · kind B2 · utility
12Cited by
5References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 31, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/679
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor including, above a gate insulator, a conductive gate stack having a height, a length, and a width, this stack having a lower portion close to the gate insulator and an upper portion, wherein the stack has a first length in its lower portion, and a second length shorter than the first length in its upper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.