Planar metrology pad adjacent a set of fins of a fin field effect transistor device
US9121890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.