Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device
US9123627B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One method disclosed herein includes removing at least a portion of a fin to thereby define a fin trench in a layer of insulating material, forming first and second layers of semiconductor material in the fin trench, after forming the second layer of semiconductor material, performing an anneal process to induce defect formation in at least the first layer of semiconductor material, wherein, after the anneal process is performed, the upper surface of the second layer of semiconductor material is substantially defect-free, forming a layer of channel semiconductor material on the upper surface of the second layer of semiconductor material and forming a gate structure around at least a portion of the channel semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.