Epitaxial chamber with cross flow
US9127360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.