Full metal gate replacement process for NAND flash memory
US9129854B2 · kind B2 · utility
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9References
18Claims
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Key dates
| Filing date | Oct 4, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A NAND flash memory chip is made by forming sacrificial control gate structures and sacrificial select structures, and subsequently replacing these sacrificial structures with metal. Filler structures are formed between sacrificial control gate structures and are subsequently removed to form air gaps between neighboring control gate lines and between floating gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.