Inventor · Los Gatos, CA, US

Jongsun Sel

21Patents
8h-index
49Co-inventors
71Inventor score

Filing activity: Jun 30, 2008 → Mar 1, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US10014316B2 Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof Electricity 30 Active
US10283566B2 Three-dimensional memory device with through-stack contact via structures and method of making thereof Electricity 20 Active
US8969206B1 Triple patterning NAND flash memory with stepped mandrel Electricity 20 Active
US10319680B1 Metal contact via structure surrounded by an air gap and method of making thereof Electricity 17 Active
US8932955B1 Triple patterning NAND flash memory with SOC Electricity 11 Active
US8665643B2 Non-volatile memory device and read method thereof Physics 8 Active
US10290681B2 Array of hole-type surround gate vertical field effect transistors and method of making thereof Electricity 8 Active
US9601508B2 Blocking oxide in memory opening integration scheme for three-dimensional memory structure Electricity 8 Active
US8879331B2 Shared bit line string architecture Physics 7 Active
US10224373B2 Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same Electricity 7 Active
US8379456B2 Nonvolatile memory devices having dummy cell and bias methods thereof Physics 7 Active
US10115895B1 Vertical field effect transisitors having a rectangular surround gate and method of making the same Electricity 6 Active
US9099532B2 Processes for NAND flash memory fabrication Electricity 4 Active
US10115770B2 Methods and apparatus for three-dimensional nonvolatile memory Electricity 3 Active
US7821834B2 Nonvolatile memory devices that utilize dummy memory cells to improve data reliability in charge trap memory arrays Electricity 2 Active
US9224475B2 Structures and methods for making NAND flash memory Electricity 2 Active
US8932948B2 Memory cell floating gate replacement Electricity 1 Active
US9613806B2 Triple patterning NAND flash memory Electricity 0 Active
US9129854B2 Full metal gate replacement process for NAND flash memory Electricity 0 Active
US9153595B2 Methods of making word lines and select lines in NAND flash memory Electricity 0 Active
US10707314B2 Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.