High electron mobility semiconductor device and method therefor
US9129889B2 · kind B2 · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.