Patent · US Active

Continuous plasma ETCH process

US9129902B2 · kind B2 · utility

2Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 1, 2013
Grant dateSep 8, 2015
Priority date—
Expiry dateJun 18, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for etching features with a continuous plasma is provided. A first plasma process is provided, comprising providing a flow of a first process gas into a process chamber, maintaining the continuous plasma, and stopping the flow of the first process gas into the process chamber. A transition process is provided, comprising providing a flow of a transition gas into the process chamber, maintaining the continuous plasma, and stopping the flow of the transition gas into the process chamber. A second plasma process is provided, comprising providing a flow of a second process gas into the process chamber, maintaining the continuous plasma, and stopping the second process gas into the process chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.