Planar metrology pad adjacent a set of fins of a fin field effect transistor device
US9129905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Dec 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Approaches for providing a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. A previously deposited amorphous carbon layer can be removed from over a mandrel that has been previously formed on a subset of a substrate, such as using a photoresist. A pad hardmask can be formed over the mandrel on the subset of the substrate. This formation results in the subset of the substrate having the pad hardmask covering the mandrel thereon and the remainder of the substrate having the amorphous carbon layer covering the mandrel thereon. This amorphous carbon layer can be removed from over the mandrel on the remainder of the substrate, allowing a set of fins to be formed therein while the amorphous carbon layer keeps the set of fins from being formed in the portion of the substrate that it covers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.