Tamper detection and response in a memory device
US9135970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0073
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A technique for detecting tampering attempts directed at a memory device includes setting each of a plurality of detection memory cells to an initial predetermined state, where corresponding portions of the plurality of detection memory cells are included in each of the arrays of data storage memory cells on the memory device. A plurality of corresponding reference bits on the memory device permanently store information representative of the initial predetermined state of each of the detection memory elements. When a tamper detection check is performed, a comparison between the reference bits and the current state of the detection memory cells is used to determine whether any of the detection memory cells have changed state from their initial predetermined states. Based on the comparison, a tamper detect indication is flagged if a threshold level of change is determined. Once a tampering attempt is detected, responses on the memory device include disabling one or more memory operations and generating a mock current to emulate current expected during normal operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.