Silicon carbide semiconductor device
US9136372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2012 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | May 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.