III-N material grown on ErAlN buffer on Si substrate
US9142406B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | May 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.