Using sacrificial oxide layer for gate length tuning and resulting device
US9147572B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 16, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | May 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for controlling the length of a replacement metal gate to a designed target gate length and the resulting device are disclosed. Embodiments may include removing a dummy gate from above a substrate forming a cavity, wherein side surfaces of the cavity are lined with an oxidized spacer layer and a bottom surface of the cavity is lined with a gate oxide layer, conformally forming a sacrificial oxide layer over the substrate and the cavity, and removing the sacrificial oxide layer from the bottom surface of the cavity and the substrate leaving sacrificial oxide spacers lining the side surfaces of the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.