Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materials

US9147616B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ajey Poovannummoottil Jacob · Watervliet, US
• Murat Kerem Akarvardar · Saratoga Springs, US

Key dates

• Filing date: Aug 28, 2014
• Grant date: Sep 29, 2015
• Expiry date: Aug 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

One illustrative method disclosed herein includes, among other things, oxidizing a lower portion of an initial fin structure to thereby define an isolation region that vertically separates an upper portion of the initial fin structure from a semiconducting substrate, performing a recess etching process to remove a portion of the upper portion of the initial fin structure so as to define a recessed fin portion, forming a replacement fin on the recessed fin portion so as to define a final fin structure comprised of the replacement fin and the recessed fin portion, and forming a gate structure around at least a portion of the replacement fin.