Method for detecting defects in a diffusion barrier layer

US9147618B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Frank Koschinsky · Radebeul, DE
• Bernd Hintze · Rohrbach, DE
• Dirk Utess · Dresden, DE

Key dates

• Filing date: Oct 22, 2013
• Grant date: Sep 29, 2015
• Expiry date: Oct 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of providing a semiconductor structure comprising a diffusion barrier layer and a seed layer, the seed layer comprising an alloy of copper and a metal other than copper, depositing an electrically conductive material on the seed layer, performing an annealing process, wherein at least a first portion of the metal other than copper diffuses away from a vicinity of the diffusion barrier layer through the electrically conductive material, and wherein, in case of a defect in the diffusion barrier layer, a second portion of the metal other than copper indicative of the defect remains in a vicinity of the defect, measuring a distribution of the metal other than copper in at least a portion of the semiconductor structure, and determining, from the measured distribution of the metal other than copper, if the second portion of the metal other than copper is present.