Charge-compensation semiconductor device

US9147763B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans Weber · Villach, AT
• Franz Hirler · Isen, DE
• Armin Willmeroth · Friedberg, DE
• Stefan Gamerith · Villach, AT

Key dates

• Filing date: Sep 23, 2013
• Grant date: Sep 29, 2015
• Expiry date: Oct 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material in Ohmic contact with a drain metallization and the n-type pillar regions and having a doping charge per area higher than a breakdown charge per area of the semiconductor material. A punch-through area of the semiconductor body includes a p-type semiconductor region in Ohmic contact with a source metallization, a floating p-type body region and an n-type second field-stop region. The floating p-type body region extends into the active area. The second field-stop region is in Ohmic contact with the first field-stop region, forms a pn-junction with the floating p-type body region, is arranged between the p-type semiconductor region and floating p-type body region, and has a doping charge per area lower than the breakdown charge per area of the semiconductor material.