FinFET semiconductor devices with improved source/drain resistance and methods of making same

US9147765B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Mark V. Raymond · Austin, US
• Robert J. Miller · Yorktown Heights, US

Key dates

• Filing date: Jan 19, 2012
• Grant date: Sep 29, 2015
• Expiry date: Mar 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/025

Abstract

Disclosed herein are various FinFET semiconductor devices with improved source/drain resistance and various methods of making such devices. One illustrative device disclosed herein includes a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches at least partially define a fin for the device, an etch stop layer positioned above a bottom surface of each of the trenches, and a metal silicide region formed on all exposed surfaces of the fin that are positioned above an upper surface of the etch stop layer.