Patent · US Active

Semiconductor structure and method for making same

US9159620B2 · kind B2 · utility

1Cited by

0References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Mackh · Dresden, DE
Uwe Seidel · Munich, DE
Rainer Leuschner · Regensburg, DE

Key dates

Filing date	Sep 2, 2014
Grant date	Oct 13, 2015
Priority date	—
Expiry date	Sep 2, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a substrate; forming a dielectric layer over the substrate; forming a first opening and a second opening at least partially simultaneously through the dielectric layer over the substrate; and forming a third opening through the bottom surface of the first opening and into at least a portion of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.