Patent · US Active

Crack stopper on under-bump metallization layer

US9159686B2 · kind B2 · utility

8Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 10, 2012
Grant dateOct 13, 2015
Priority date
Expiry dateApr 10, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/12042
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.