Patent · US Active

Method for permanently bonding wafers

US9159717B2 · kind B2 · utility

3Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 8, 2011
Grant dateOct 13, 2015
Priority date
Expiry dateJun 12, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate, the second substrate having at least one reaction layer, with the following steps, especially the following sequence:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.