Cross-coupling-based design using diffusion contact structures
US9159724B2 · kind B2 · utility
6Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 22, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Mar 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.